Fluorine-free prepared two-dimensional molybdenum boride (MBene) as a promising anode for lithium-ion batteries with superior electrochemical performance

被引:102
作者
Xiong, Wei [1 ,2 ]
Feng, Xingyu [1 ]
Xiao, Yi [3 ]
Huang, Tao [1 ]
Li, Xiaoyan [1 ]
Huang, Zhencheng [1 ]
Ye, Shenghua [1 ,4 ]
Li, Yongliang [1 ]
Ren, Xiangzhong [1 ]
Wang, Xinzhong [2 ]
Ouyang, Xiaoping [5 ]
Zhang, Qianling [1 ]
Liu, Jianhong [1 ,4 ]
机构
[1] Shenzhen Univ, Coll Chem & Environm Engn, Graphene Composite Res Ctr, Shenzhen 518060, Peoples R China
[2] Inst Informat Technol, Shenzhen Inst Informat Technol, Shenzhen 518172, Peoples R China
[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
[4] Shenzhen Eigen Equat Graphene Technol Co Ltd, Shenzhen 518060, Peoples R China
[5] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China
关键词
Molybdenum boride; MBene; Fluorine-free; Lithium -ion batteries; MAB phase; HYDROGEN EVOLUTION;
D O I
10.1016/j.cej.2022.137466
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
MBene, an emerging two-dimensional material generated from bulk ternary metallic boride (MAB phase), has gradually attracted increasing research attention. However, the fabrication of MBene is still a great challenge, resulting in no literature reported about the application of MBene in energy storage fields (e.g. lithium-ion batteries). It is not advisable to adopt the same HF etching strategy which is generally used for the fabrication of MXene owing to the severely corrosive and toxic properties of the HF acid. Here, a fluorine-free hydrothermalassisted alkane solution etching method is used to prepare the two-dimensional (2D) MoB MBene from MoAlB. The 2D MoB MBene as an anode material in LIBs exhibits a high electrochemical performance, the results exhibit a reversible specific capacity of 144.2 mAh g-1 after 1000 cycles at the current density of 2 A g-1, which is higher than many reported MXene anodes. This fluorine-free method provides a promising green strategy for exploring series of MBene materials for a wealth of application fields.
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页数:8
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