1.54 μm photoluminescence of Er-containing N-doped a-Si:H

Nitrogen-doped hydrogenated amorphous SiEr (a-SiEr:H) films were deposited by co-sputtering from an Er partially covered Si target. Photoluminescence, infrared absorption and Raman spectroscopies were performed as a function of thermal annealing treatments and Er concentrations. As-deposited N-doped a-SiEr:H samples exhibit 1.54 mu m Er(3+) photoluminescence at room temperature and reaches its maximum after cumulative thermal annealing at - 500 degrees C. in addition to the Er(3+) light emission increase, thermal annealing induces the effusion of hydrogen and nitrogen bonded to silicon atoms. The experimental data indicate that both the hydrogen and nitrogen concentration improve the Er3+ light emission at 1.54 mu m by decreasing the rate of non-radiative processes. (C) 1998 Elsevier Science B.V. All rights reserved.