Compact Charge Model for Independent-Gate Asymmetric DGFET

被引：14

作者：

Dessai, Gajanan ^{[1
]}

Wu, Weimin ^{[1
]}

Gildenblat, Gennady ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 09期

关键词：

Charge model; compact model; double-gate MOSFET; independent-gate asymmetric DGFET; DG MOSFETS; CIRCUIT SIMULATION; DRAIN-CURRENT; SOI MOSFETS; DESIGN; LINEARIZATION; FINFETS; DEVICES; BULK;

D O I：

10.1109/TED.2010.2054470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions for terminal charges of an independent-gate asymmetric double gate MOSFET (DGFET) are derived. The new charge model is C(infinity) continuous, valid for all bias conditions and does not involve charge-sheet approximation. This is accomplished by developing the symmetric linearization method in the form that does not require identical boundary conditions at the two Si-SiO(2) interfaces and allows for the volume inversion in the DGFET channel. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The terminal charges expressions are similar to those in the PSP bulk MOSFET model and in the PSP-based common-gate symmetric DGFET model. The latter becomes a special case of the new model.

引用

页码：2106 / 2115

页数：10

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