Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy

被引：1

作者：

Rudra, A ^{[1
]}

Sagalowicz, L ^{[1
]}

Leifer, K ^{[1
]}

Behrend, J ^{[1
]}

Berseth, CA ^{[1
]}

Dehaese, O ^{[1
]}

Carlin, JF ^{[1
]}

Kapon, E ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 188卷 / 1-4期

关键词：

InGaAsP; distributed Bragg reflector; electron microscopy;

D O I：

10.1016/S0022-0248(98)00050-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral fluctuations in the GaInAsP alloy composition, clearly visible in the 490-510 degrees C growth temperature range, but less perceptible between 460 and 480 degrees C. In the higher temperature range, the modulation in composition shows a higher frequency along the [1 (1) over bar 0] direction than along [1 1 0]. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：300 / 306

页数：7

共 50 条

[21] Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InP
Klem, JF
Serkland, DK
Kim, J
Wang, TY
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1468 - 1471
[22] Growth and realization of InGaAs/InP and InGaAs/InGaAsP quantum photonic devices grown by chemical beam epitaxy
Rigo, C
Cacciatore, C
Campi, D
Coriasso, C
Soldani, D
Stano, A
ADVANCES IN CRYSTAL GROWTH, 1996, 203 : 109 - 113
[23] High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
Ng, HM
Moustakas, TD
Chu, SNG
APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2818 - 2820
[24] SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY
SUGIMOTO, M
OGURA, I
SAITO, H
YASUDA, A
KURIHARA, K
KOSAKA, H
NUMAI, T
KASAHARA, K
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 1 - 4
[25] CHEMICAL BEAM EPITAXY AND PHOTOLUMINESCENCE CHARACTERISTICS OF INGAASP/INP BRAQWET MODULATORS
CARLIN, JF
DWIR, B
GLICK, M
MONNARD, R
RUDRA, A
DUPERTUIS, MA
REINHART, FK
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 293 - 295
[26] InP and InGaAsP materials grown by solid-source molecular beam epitaxy
Lu, JH
Hao, ZB
Ren, ZY
Luo, Y
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 870 - 873
[27] AlN/AlGaN Bragg reflectors grown by gas source molecular beam epitaxy
Kipshidze, G
Kuryatkov, V
Choi, K
Gherasoiu, I
Borisov, B
Nikishin, S
Holtz, M
Tsvetkov, D
Dmitriev, V
Temkin, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 881 - 884
[28] InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
Lu, TC
Tsai, JY
Chu, JT
Chang, YS
Wang, SC
JOURNAL OF CRYSTAL GROWTH, 2003, 250 (3-4) : 305 - 312
[29] Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy
Hjort, Filip
Hashemi, Ehasan
Adolph, David
Ive, Tommy
Haglund, Asa
GALLIUM NITRIDE MATERIALS AND DEVICES XII, 2017, 10104
[30] OPTICAL EVALUATION OF AN ALAS/ALGAAS VISIBLE BRAGG REFLECTOR GROWN BY CHEMICAL BEAM EPITAXY
ARMSTRONG, JV
FARRELL, T
BOYD, A
BEANLAND, R
APPLIED PHYSICS LETTERS, 1992, 61 (23) : 2770 - 2772

← 1 2 3 4 5 →