Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy

被引：1
|
作者：
Rudra, A [1 ]
Sagalowicz, L [1 ]
Leifer, K [1 ]
Behrend, J [1 ]
Berseth, CA [1 ]
Dehaese, O [1 ]
Carlin, JF [1 ]
Kapon, E [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 188卷 / 1-4期
关键词：
InGaAsP; distributed Bragg reflector; electron microscopy;
D O I：
10.1016/S0022-0248(98)00050-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral fluctuations in the GaInAsP alloy composition, clearly visible in the 490-510 degrees C growth temperature range, but less perceptible between 460 and 480 degrees C. In the higher temperature range, the modulation in composition shows a higher frequency along the [1 (1) over bar 0] direction than along [1 1 0]. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：300 / 306
页数：7
相关论文
共 50 条
  • [1] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY
    CAMPBELL, JC
    TSANG, WT
    QUA, GJ
    JOHNSON, BC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2380 - 2380
  • [2] Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE
    Behrend, J
    Rudra, A
    Sagalowicz, L
    Berseth, CA
    Carlin, JF
    Schoenberg, A
    Jouneau, PH
    Kapon, E
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 428 - 431
  • [3] LONG WAVELENGTH INGAASP INP DISTRIBUTED FEEDBACK LASERS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CHOA, FS
    WU, MC
    CHEN, YK
    LOGAN, RA
    CHU, SNG
    SERGENT, AM
    MAGILL, P
    REICHMANN, KC
    BURRUS, CA
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 716 - 722
  • [4] Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs
    Reddy, MHM
    Asano, T
    Koda, R
    Buell, DA
    Coldren, LA
    ELECTRONICS LETTERS, 2002, 38 (20) : 1181 - 1182
  • [5] 1.3-MU-M INGAASP/INP MULTIQUANTUM WELL BURIED HETEROSTRUCTURE LASERS GROWN BY CHEMICAL-BEAM EPITAXY
    TSANG, WT
    CHOA, FS
    LOGAN, RA
    TANBUNEK, T
    WU, MC
    CHEN, YK
    SERGENT, AM
    WECHT, KW
    APPLIED PHYSICS LETTERS, 1991, 59 (24) : 3084 - 3086
  • [6] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CAMPBELL, JC
    QUA, GJ
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 294 - 296
  • [7] Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
    Gong, Q
    Nötzel, R
    van Veldhoven, PJ
    Eijkemans, TJ
    Wolter, JH
    APPLIED PHYSICS LETTERS, 2004, 84 (02) : 275 - 277
  • [8] HIGH REFLECTIVITY 1.55-MU-M INP/INGAASP BRAGG MIRROR GROWN BY CHEMICAL BEAM EPITAXY
    CHOA, FS
    TAI, K
    TSANG, WT
    CHU, SNG
    APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2820 - 2822
  • [9] LONG-WAVELENGTH INGAASP/INP MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK AND DISTRIBUTED-BRAGG-REFLECTOR LASERS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    WU, MC
    CHEN, YK
    CHOA, FS
    LOGAN, RA
    CHU, SNG
    SERGENT, AM
    MAGILL, P
    REICHMANN, KC
    BURRUS, CA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (06) : 1370 - 1380
  • [10] ZnMgSe ZnCdSe and ZnMgSe ZnSeTe distributed Bragg reflectors grown by molecular beam epitaxy
    Peiris, FC
    Lee, S
    Bindley, U
    Furdyna, JK
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 719 - 724
12345