Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer

被引：37

作者：

Matsuda, Iwao

Liu, Canhua

Hirahara, Toru

Ueno, Masashi

Tanikawa, Takehiro

Kanagawa, Taizo

Hobara, Rei

Yamazaki, Shiro

Hasegawa, Shuji

机构：

[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Ochanomizu Univ, Fac Sci, Dept Phys, Tokyo 1128610, Japan

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.99.146805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Temperature-dependent electron transport in a metallic surface superstructure, Si(111) root 3 x root 3-Ag, was studied by a micro-four-point probe method and photoemission spectroscopy. The surface-state conductivity exhibits a sharp transition from metallic conduction to strong localization at similar to 150 K. The metallic regime is due to electron-phonon interaction while the localization seemingly originates from coherency of electron waves. Random potential variations, caused by Friedel oscillations of surface electrons around defects, likely induce strong carrier localization.

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页数：4

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