A study on the radiation hardness of lead tungstate crystals

被引：37
作者：
Zhu, RY
Deng, Q
Newman, H
Woody, CL
Kierstead, JA
Stoll, SP
机构：
[1] CALTECH, Pasadena, CA 91125 USA
[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[3] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期
关键词：
D O I：
10.1109/23.682613
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This report presents recent progress of a study on the radiation damage in lead tungstate (PbWO4) crystals. The dose rate dependence of radiation damage in PbWO4 has been observed. An optimization of the oxygen compensation through post-growth thermal annealing has led to PbWO4 samples with significantly improved radiation hardness. Front irradiation is found to cause a factor of 2 to 6 times less severe damage than uniform irradiation. Lanthanum doping was found not to be a determining factor for PbWO4 radiation hardness improvement. Finally, a TEM/EDS analysis revealed that the radiation damage in PbWO4 crystals is caused by oxygen vacancies.
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收藏
页码：686 / 691
页数：6
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