Photovoltaic properties of In2O3/CuInSe2 heterostructures prepared by the method of thermal oxidation

被引：0

作者：

Medvedkin, GA ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia

来源：

TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoresponse spectra of In2O3/CuInSe2 heterojunctions grown on p-type CuInSe2 (CIS) single crystals as well as photoconductivity of the virgin crystals and oxide layers were studied. The distinct effect of optical interference by the upper layer has been found over the whole spectral range from 1 to 3 eV. The measurements and modeling have shown the main contribution to photovoltaic spectra are by the interference oxide layer, photosensitive interface layer and embedded p-n junction.

引用

页码：951 / 954

页数：4

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