Photovoltaic properties of In2O3/CuInSe2 heterostructures prepared by the method of thermal oxidation

被引：0

作者：

Medvedkin, GA ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia

来源：

TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoresponse spectra of In2O3/CuInSe2 heterojunctions grown on p-type CuInSe2 (CIS) single crystals as well as photoconductivity of the virgin crystals and oxide layers were studied. The distinct effect of optical interference by the upper layer has been found over the whole spectral range from 1 to 3 eV. The measurements and modeling have shown the main contribution to photovoltaic spectra are by the interference oxide layer, photosensitive interface layer and embedded p-n junction.

引用

页码：951 / 954

页数：4

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[21] STATUS OF CUINSE2 PHOTOVOLTAIC TECHNOLOGY [J].

MITCHELL, K ;

EBERSPACHER, C ;

PAULS, K .

PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON USES OF SELENIUM AND TELLURIUM, 1989, :572-582

[22] Growth of CuInSe2 and In2Se3/CuInSe2 Nano-Heterostructures through Solid State Reactions [J].

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Wu, Wen-Wei ;

Chen, Lih-Juann .

NANO LETTERS, 2011, 11 (10) :4348-4351

[23] Optical Characterization of CuInSe2 Thin Films Prepared by Vacuum Thermal Evaporation Method [J].

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[25] PROPERTIES OF CUINSE2 AND CUINSE2 P-N-JUNCTIONS [J].

MIGLIORA.P ;

KASPER, HM .

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03) :199-199

[26] OPTICAL-PROPERTIES OF THERMAL OXIDE IN CUINSE2 [J].

MEDVEDKIN, GA ;

BEKIMBETOV, RN ;

MAKAROVA, TL ;

SMIRNOVA, AD ;

SOKOLOVA, VI .

ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 57 (05) :960-964

[27] In2O3 films prepared by thermal oxidation of amorphous InSe thin films [J].

Siciliano, T. ;

Di Giulio, M. ;

Tepore, M. ;

Genga, A. ;

Micocci, G. ;

Tepore, A. .

THIN SOLID FILMS, 2012, 520 (07) :2455-2460

[28] Growth of CuIn3Se5 layer on the CuInSe2 film and its effect on the photovoltaic properties of In2Se3/CuInSe2 solar cells [J].

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Song, J .

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[29] Defect properties of CuInSe2 single crystals prepared by selenization horizontal Bridgman method [J].

Matsushita, H ;

Takizawa, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08) :4258-4263

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