A boundary value problem for a kinetic model describing electron flow in a semiconductor

被引：0

作者：

Drago, CR ^{[1
]}

Majorana, A ^{[1
]}

机构：

[1] Univ Catania, Dipartmento Matemat, I-95125 Catania, Italy

来源：

MATHEMATICAL METHODS IN THE APPLIED SCIENCES | 2000年 / 23卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

A kinetic model describing the evolution of an electron gas in a semiconductor device is analysed. It arises from the Boltzmann equation by using a spherical harmonic expansion, and it involves difference-partial differential equations. A boundary value problem is proposed and an existence and uniqueness theorem is proved for the stationary one-dimensional case. A simple asymptotic model is derived and for this a maximum principle is shown. Copyright (C) 2000 John Whey & Sons, Ltd.

引用

页码：735 / 750

页数：16

共 12 条

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