A novel wideband GaAsFET source injected distributed mixer

被引：0
|
作者：
Shastry, Prasad N. [1 ]
Cullerton, Edward W. [2 ]
机构：
[1] Bradley Univ, Dept Elect & Comp Engn, Peoria, IL 61625 USA
[2] Fermi Natl Lab, Batavia, IL 60510 USA
来源：
2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年
关键词：
active mixer; distributed mixer; GaAsFET mixer; source injected mixer; wideband mixer;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the design and measured results of a novel wideband distributed architecture GaAs FET mixer in which the LO signal is injected into the mixer through the source terminals of FETs are presented. The prototype MESFET source injected distributed mixer has a conversion gain (without IF signal amplification) varying from -8 to -3.5 dB in the range 1 to 3 GHz. It has good return losses at all ports, and excellent isolation between the three ports, in the range 1 to 3 GHz. The mixer requires a DC voltage of only 1.5 V and operates with less than 12 mA current. The topology of this mixer is suitable for monolithic implementation.
引用
收藏
页码：1027 / +
页数：2
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