High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers

被引：128

作者：

Chen, Songtao ^{[1
]}

Zhang, Cheng ^{[2
]}

Lee, Joonhee ^{[1
]}

Han, Jung ^{[2
]}

Nurmikko, Arto ^{[3
,4
]}

机构：

[1] Brown Univ, Sch Engn, Providence, RI 02912 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA

[3] Brown Univ, Sch Engn, Providence, RI 02912 USA

[4] Brown Univ, Dept Phys, Providence, RI 02912 USA

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 16期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; AMPLIFIED SPONTANEOUS EMISSION; ORGANOMETAL HALIDE PEROVSKITE; NANOWIRE LASERS; SEMICONDUCTOR MICROCAVITY; IODIDE PEROVSKITE; SINGLE-CRYSTALS; STATE; GAIN; BLUE;

D O I：

10.1002/adma.201604781

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A vertical-cavity surface-emitting perovskite laser is achieved using a microcavity configuration where CH3NH3PbI3 thin solid films are embedded within a custom GaN-based high-quality (Q-factor) resonator. This single-mode perovskite laser reaches a low threshold (approximate to 7.6 mu J cm(-2)) at room temperature and emits spatially coherent Gaussian laser beams. The devices allow direct access to the study of perovskite gain dynamics and material robustness.

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页数：9

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