High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers

被引:128
作者
Chen, Songtao [1 ]
Zhang, Cheng [2 ]
Lee, Joonhee [1 ]
Han, Jung [2 ]
Nurmikko, Arto [3 ,4 ]
机构
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
[3] Brown Univ, Sch Engn, Providence, RI 02912 USA
[4] Brown Univ, Dept Phys, Providence, RI 02912 USA
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; AMPLIFIED SPONTANEOUS EMISSION; ORGANOMETAL HALIDE PEROVSKITE; NANOWIRE LASERS; SEMICONDUCTOR MICROCAVITY; IODIDE PEROVSKITE; SINGLE-CRYSTALS; STATE; GAIN; BLUE;
D O I
10.1002/adma.201604781
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A vertical-cavity surface-emitting perovskite laser is achieved using a microcavity configuration where CH3NH3PbI3 thin solid films are embedded within a custom GaN-based high-quality (Q-factor) resonator. This single-mode perovskite laser reaches a low threshold (approximate to 7.6 mu J cm(-2)) at room temperature and emits spatially coherent Gaussian laser beams. The devices allow direct access to the study of perovskite gain dynamics and material robustness.
引用
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页数:9
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