A Sub-1-ppm/°C Curvature-Compensated Bandgap Voltage Reference

被引：0

作者：

Wan, Meilin ^{[1
]}

Gu, Haoshuang ^{[1
]}

Zhang, Zhenzhen ^{[2
]}

机构：

[1] Hubei Univ, Fac Phys & Elect Technol, Wuhan, Peoples R China

[2] Wuhan Metro Grp Co Ltd, Signal Dept, Wuhan, Peoples R China

来源：

PROCEEDINGS OF 2016 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM) | 2016年

关键词：

bandgap reference; TC; CTAT; PTAT; curvature correction;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new sub-1-ppm/degrees C curvature-compensated bandgap voltage reference (BGR) is presented in this paper. The Complementary to Absolute Temperature (CTAT) voltage component of a forward biased BJT is first well balanced with a Proportional to Absolute Temperature (PTAT) voltage, leaving only a high order logarithmic error with the form of TlnT. This residual non-linear error is corrected by a difference of two CTAT voltages with different non-linear terms through controlling the collector currents of BJTs, which can achieve an ideal non-linear compensation. All the circuits are designed in a standard 0.35-mu m CMOS process. The post-simulation results show the proposed BGR achieves temperature coefficient (TC) of 0.7 ppm/degrees C over temperature range of -40 degrees C to 125 degrees C and power supply rejection (PSR) of -104 dB at 3.6 V power supply. The line regulation of the output reference voltage is 0.1 mV/V in the supply range of 24.5 V. The maximum dissipating current from the supply is 25.45 mu A.

引用

页码：81 / 85

页数：5

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