Synthesis and microwave dielectric properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics

被引：85

作者：

Kim, Jae Chul

Kim, Min-Han

Lim, Jong-Bong

Nahm, Sahn ^{[1
]}

Paik, Jong-Hoo

Kim, Jong-Hee

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1111/j.1551-2916.2006.01435.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350 degrees-1500 degrees C had a high-quality factor (Q x f) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (epsilon(r)) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (tau(f)) in the range of -33.7 to -12.4 ppm/degrees C. In particular, the Sm3Ga5O12 ceramics sintered at 1450 degrees C exhibited good microwave dielectric properties of epsilon(r)=12.4, Q x f=192 173 GHz, and tau(f)=-19.2 ppm/degrees C.

引用

页码：641 / 644

页数：4

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