Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

被引：16
|
作者：
John, JP [1 ]
Chai, F [1 ]
Morgan, D [1 ]
Keller, T [1 ]
Kirchgessner, J [1 ]
Reuter, R [1 ]
Rueda, H [1 ]
Teplik, J [1 ]
White, J [1 ]
Wipf, S [1 ]
Zupac, D [1 ]
机构：
[1] Motorola Inc, Semicond Prod Sector, Digital DNATM Labs, Tempe, AZ 85284 USA
来源：
PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年
关键词：
D O I：
10.1109/BIPOL.2002.1042916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola's 0.35mum and 0.18mum BiCMOS technologies. Cutoff frequencies (f(T)) have been improved from 50GHz to 78/84GHz (0.35/0.18mum BiCMOS), with a reduction in minimum noise figure (NF) from 0.7dB to 0.3dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.
引用
收藏
页码：193 / 196
页数：4
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