170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

被引：61

作者：

Bradley, Jonathan D. B. ^{[1
]}

Costa e Silva, Marcia ^{[2
]}

Gay, Mathilde ^{[2
]}

Bramerie, Laurent ^{[2
]}

Driessen, Alfred ^{[1
]}

Worhoff, Kerstin ^{[1
]}

Simon, Jean-Claude ^{[2
]}

Pollnau, Markus ^{[1
]}

机构：

[1] Univ Twente, Integrated Opt Microsyst Grp, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Univ Rennes 1, FOTON Lab, CNRS UMR PERSYST Platform 6082, ENSSAT, F-22305 Lannion, France

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 24期

关键词：

FABRICATION; AL2O3; EDWA;

D O I：

10.1364/OE.17.022201

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Signal transmission experiments were performed at 170 Gbit/s in an integrated Al2O3:Er3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence. (C) 2009 Optical Society of America

引用

页码：22201 / 22208

页数：8

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