Leakage Current Compensation Technique of ESD Protection Circuit for CMOS Operational Amplifier

被引:0
|
作者
Chin, Koken [1 ]
San, Hao [1 ]
Kitajima, Atsushi [2 ]
Arai, Yoshiaki [2 ]
Yamashita, Jun [2 ]
Ito, Hisashi [2 ]
机构
[1] Tokyo City Univ, Setagaya Ku, 1-28-1 Tamazutsumi, Tokyo 1588557, Japan
[2] New Japan Radio CO Ltd, Chuo Ku, 3-10 Nihonbashi Yokoyama Cho, Tokyo 1038456, Japan
来源
2016 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATION SYSTEMS (ISPACS) | 2016年
关键词
Input bias current; Electrostatic Discharge; ESD protection circuit;
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper presents an input bias current reduction technique for CMOS operational amplifier (op-amp) with electrostatic discharge (ESD) protection circuit. In a high input impedance CMOS op-amp, the leakage current of electrostatic discharge protection circuit causes a non-ideality error of input bias current. Especially, the leakage current increases drastically at high operating temperature. Proposed input bias current cancellation technique uses an additional op-amp and the replicas of ESD protection diodes to compensate the leakage current of ESD to reduce the input current of op-amp. SPICE simulation results verify the leakage current reduction effectiveness of proposed technique, and the input current of amplifier decreased to less than IpA at 150 degrees in 0.7um standard CMOS technology without any extra options.
引用
收藏
页码:518 / 521
页数:4
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