共 45 条
[1]
SURFACE CORE-LEVEL SHIFTS AND RELAXATION OF GROUP-IVA-ELEMENT CHALCOGENIDE SEMICONDUCTORS
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PHYSICAL REVIEW B,
1991, 43 (12)
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[2]
SURFACE TERMINATION OF EPITAXIAL NIAL ON GAAS(001) BY X-RAY PHOTOELECTRON DIFFRACTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
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[3]
SURFACE TERMINATION OF EPITAXIAL NIAL ON GAAS(001) BY HIGH-ANGULAR-RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION
[J].
PHYSICAL REVIEW B,
1990, 42 (17)
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[4]
ZNSE(100) SURFACE - ATOMIC CONFIGURATIONS, COMPOSITION, AND SURFACE DIPOLE
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PHYSICAL REVIEW B,
1994, 49 (15)
:10790-10793
[5]
ZNSE(100) - THE SURFACE AND THE FORMATION OF SCHOTTKY BARRIERS WITH AL AND AU
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994, 12 (04)
:2639-2645
[8]
(111)CDTE SURFACE-STRUCTURE - A STUDY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND X-RAY PHOTOELECTRON DIFFRACTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1991, 9 (06)
:3025-3030
[9]
PHOTOEMISSION-STUDIES OF SURFACE CORE-LEVEL SHIFTS AND THEIR APPLICATIONS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 20 (03)
:609-616
[10]
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656