Radiative lifetime of geminate and non-geminate pairs in amorphous semiconductors:: a-Ge:H

被引：2

作者：

Singh, Jai ^{[1
]}

机构：

[1] Charles Darwin Univ, Fac Technol, Darwin, NT 0909, Australia

来源：

Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 10 | 2006年 / 3卷 / 10期

关键词：

D O I：

10.1002/pssc.200672155

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lifetimes of radiative recombination of geminate and non-geminate pairs in amorphous semiconductors are calculated at thermal equilibrium. The theory is applied to calculate the radiative lifetimes of type I and 11 geminate pairs and non-geminate pairs in hydrogenated amorphous germanium (a-Ge:H) and compared with the experimental results. The type 11 geminate pairs can exist in singlet and triplet spin states, only singlet is considered here, whereas the type I geminate pairs do not have spin dependence. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：3378 / 3381

页数：4

共 11 条

[1]

[Anonymous], PHYS HYDROGENATED AM

[2]

Aoki T, 2005, J OPTOELECTRON ADV M, V7, P137

[3]

AOKI T, 2006, IN PRESS PHOTOLUMINE, pCH5

[4] PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS-SILICON [J].

DUNSTAN, DJ ;

BOULITROP, F .

PHYSICAL REVIEW B, 1984, 30 (10) :5945-5957

[5] PHOTOLUMINESCENCE OF AMORPHOUS-SILICON AT LOW-TEMPERATURES - COMPUTER-SIMULATION [J].

LEVIN, EI ;

MARIANER, S ;

SHKLOVSKII, BI .

PHYSICAL REVIEW B, 1992, 45 (11) :5906-5918

[6]

Morigaki K., 1999, PHYS AMORPHOUS SEMIC

[7] ELECTRONIC TRANSPORT AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES [J].

SHKLOVSKII, BI ;

FRITZSCHE, H ;

BARANOVSKII, SD .

PHYSICAL REVIEW LETTERS, 1989, 62 (25) :2989-2992

[8] Radiative lifetime of excitonic photoluminescence in amorphous semiconductors [J].

Singh, J ;

Oh, IK .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[9]

Singh J., 2003, Advances in Amorphous Semiconductors

[10]

SINGH J, 2006, IN PRESS J NONCRYST

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