Reliability of dielectric barrier films in copper damascene applications

被引：0

作者：

Lee, AS ^{[1
]}

Lakshmanan, A ^{[1
]}

Rajagopalan, N ^{[1
]}

Cui, ZJ ^{[1
]}

Le, M ^{[1
]}

Xia, LQ ^{[1
]}

Kim, BH ^{[1
]}

M'Saad, H ^{[1
]}

机构：

[1] Appl Mat Inc, Dielect Syst & Modules Prod Business Grp, Santa Clara, CA 95054 USA

来源：

MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004 | 2004年 / 812卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The film properties of two PECVD deposited dielectric copper barrier films have been optimized to improve BEOL device reliability in terms of electromigration. Two critical aspects that affect electromigration are the dielectric barrier film hermeticity and adhesion to copper. We use a method to quantify the barrier film hermeticity and have optimized the hermeticity of the BLOkappa((TM)) low-kappa dielectric barrier film to be similar to that of silicon nitride. By using FT-IR we find that the film porosity has a much stronger effect than the film stoichiometry on hermeticity. In addition, the interfaces between Damascene Nitride(TM) with copper, as well as BLOkappa with copper have been engineered to improve the interfacial adhesion energy to >10 J/m(2) for both Damascene Nitride and BLOkappa.

引用

页码：221 / 226

页数：6

共 7 条

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