Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT

被引：0

作者：

Khan, A. ^{[1
]}

Dharmasiri, C. N. ^{[1
]}

Miura, T. ^{[1
]}

Rezazadeh, A. A. ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Electromagnet Ctr, Manchester M60 1QD, Lancs, England

来源：

GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of temperature (-25 to 100(0)C) on two-tone Intermodulation Distortion (IMD) characteristics of InGaP/GaAs microwave DHBTs is studied. This is carried out through measurement with the results being compared to a simple analytical technique. The results indicated that varying the temperature has a significant impact on the IMD characteristics. The variations of small signal parameters with temperature, extracted from S-parameter measurements, are then used to carefully analyse the lMD characteristics and identify the physical origin of the change in the non-linearity. In addition, the effects of varying input power on the non-linearities has been studied. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of the microwave device.

引用

页码：209 / 212

页数：4