Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

被引：61

作者：

Tsai, Tsung-Ling ^{[1
]}

Chang, Hsiang-Yu ^{[1
]}

Jiang, Fa-Shen ^{[1
]}

Tseng, Tseung-Yuen ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 11期

关键词：

CBRAM; OxRRAM; oxygen vacancies;

D O I：

10.1109/LED.2015.2477491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum, which is attributed to a considerable amount of oxygen vacancies created in the switching layer. However, the substantial improvement in device performance, such as stable switching, high switching cycles, decreased set/reset voltages, and near-100% device yield, were obtained in the CBRAM devices during the post-HfO2 deposition annealing in vacuum.

引用

页码：1146 / 1148

页数：3

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