Optical properties of undoped and oxygen doped CuCl films on silicon substrates

被引：10

作者：

Danieluk, Dominik ^{[1
]}

Bradley, Ann L. ^{[1
]}

Mitra, Anirban ^{[1
]}

O'Reilly, Lisa ^{[2
]}

Lucas, Olibanji F. ^{[2
]}

Cowley, Aidan ^{[2
]}

McNally, Patrick J. ^{[2
]}

Foy, Barry ^{[3
]}

McGlynn, Enda ^{[3
]}

机构：

[1] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland

[2] Dublin City Univ, Sch Elect Engn, RINCE, Nanomat Proc Lab, Dublin 9, Ireland

[3] Dublin City Univ, Sch Phys Sci, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2009年 / 20卷

关键词：

BOUND-BIEXCITON PHOTOLUMINESCENCE; EXCITON LUMINESCENCE; THIN-FILMS; QUANTUM DOTS; GROWTH; SPECTRA;

D O I：

10.1007/s10854-007-9448-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, gamma-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour.

引用

页码：76 / 80

页数：5

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