A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

被引：77

作者：

Niu, GF ^{[1
]}

Cressler, JD

Mathew, SJ

Subbanna, S

机构：

[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA

[2] IBM Microelect, Hopewell Junction, NY 12533 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 09期

关键词：

LDD devices; low temperature operation; mobility; MOSFET's; parameter extraction; semiconductor device modeling;

D O I：

10.1109/16.784194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple yet effective total resistance slope-based method for extracting the effective channel mobility in deep submicrometer CMOS technology is developed. Using the slope of the measured total resistance versus mask length, the series resistance is removed from the measured total resistance, and mobility is extracted without involving the effective channel length. The new method facilitates mobility extraction in situations where the effective channel length is difficult to extract, such as in lighty-doped-drain (LDD) devices or at low temperatures. The new method also allows the series resistance to be any function of the gate bias, making the mobility extraction in LDD devices easier and more accurate.

引用

页码：1912 / 1914

页数：3

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