Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

被引:17
作者
Liu, Shengqiang [1 ]
Yu, Junsheng [1 ]
Ma, Zhu [1 ]
Zhao, Juan [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
国家教育部博士点专项基金资助; 美国国家科学基金会;
关键词
White organic light-emitting device (WOLED); High efficiency; Undoped ultrathin yellow phosphor layer; Doped blue phosphor layer; ELECTROLUMINESCENT DEVICES; QUANTUM EFFICIENCY; HOLE-TRANSPORT; DIODES; 5,6,11,12-TETRAPHENYLNAPHTHACENE; ELECTROPHOSPHORESCENCE; PERFORMANCE; COMPLEXES; EXCIMER;
D O I
10.1016/j.jlumin.2012.07.012
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)-benzothiazolato-N,C-2']iridium (acetylacetonate) [(t-bt)(2)Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m(2) (at 15.2 V), 79.0 cd/A (at 1550 cd/m(2)) and 40.5 lm/W (at 1000 cd/m(2)), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt)(2)Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:665 / 669
页数:5
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