Spin polarized transport effects in III-V semiconductor heterostructures

被引：0
|
作者：
George, JM [1 ]
机构：
[1] Univ Paris 11, CNRS, Unite Mixte Phys, THALES Res & Technol, F-91404 Orsay, France
来源：
2005 International Conference on MEMS, NANO and Smart Systems, Proceedings | 2005年
关键词：
D O I：
10.1109/ICMENS.2005.109
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：39 / 39
页数：1
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