Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films

被引:1
作者
Song, JH [1 ]
Lee, JJ
Cui, Y
Ketterson, JB
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.1853871
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAs/Si(001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300 to 20 nm for MnAs/GaAs(001) samples. These results indicate a radical change of the electronic structure of the MnAs layer. (c) 2005 American Institute of Physics.
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页数:3
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