Design and application of multiwafer MOCVD systems for ferroelectrics

被引：1

作者：

Deschler, M ^{[1
]}

Schumacher, M ^{[1
]}

Woelk, E ^{[1
]}

Schmitz, D ^{[1
]}

Strauch, G ^{[1
]}

Heuken, M ^{[1
]}

Juergensen, H ^{[1
]}

机构：

[1] AIXTRON AG, D-52072 Aachen, Germany

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

MOCVD; BST; PZT; SBT; multiwafer manufactor tool;

D O I：

10.1080/10584589808202078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metalorganic chemical vapor deposition (MOCVD) has been established as the most favoured method for the processing of (Ba,Sr)TiO3, Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films. Due to good step coverage, uniformity of thickness and composition as well as throughput MOCVD will certainly be the choice for the mass production of future electroceramic thin film based devices such as volatile and non-volatile memories, electrooptic devices, microactuators and sensors. Since many groups showed in a laboratory scale that electroceramic thin films deposited by MOCVD techniques are suitable for future applications in terms of electrical and mechanical properties, the need for production worthy tools is rapidly increasing. In this paper we present a large scale manufactor tool (capacity up to 4 x 300 mm) which meets all demands for an automized mass production of electroceramic thin films.

引用

页码：381 / 384

页数：4

共 7 条

[1] FERROELECTRICS FOR NONVOLATILE MEMORIES [J].