Room Temperature 3.5-μm Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

被引：11

作者：

Khai, Loke Wan ^{[1
]}

Hua, Tan Kian ^{[1
]}

Li Daosheng ^{[1
]}

Wicaksono, Satrio ^{[1
]}

Fatt, Yoon Soon ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2016年 / 28卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

Photodetectors; indium arsenide; molecular beam epitaxy; EPITAXY; GROWTH; LAYERS; GAAS;

D O I：

10.1109/LPT.2016.2564979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a mid-infrared InAs p-i-n photovoltaic detector on a Si substrate operating at room temperature with a cutoff wavelength at 3.5 mu m. The large 11.6% lattice mismatch between the device layer (InAs) and the Si substrate is accommodated by employing a compositionally graded buffer layer technique using solid-source molecular beam epitaxy and a commercially available GeSi substrate. An AlxIn1-xAs graded buffer layer is used to linearly scale the lattice constant from AlAs to InAs with an increasing x value. The photovoltaic detector has a responsivity of 0.57 A/W, measured using a blackbody source maintained at 700 degrees C.

引用

页码：1653 / 1656

页数：4

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