Exploration of a Kilowatt-Level Terahertz Amplifier Based on Higher-Order Mode Interaction

被引:7
作者
Zhan, Changqing [1 ]
Lu, Suye [2 ]
Cai, Jun [1 ]
Pan, Pan [1 ]
Feng, Jinjun [1 ]
机构
[1] Beijing Vacuum Elect Res Inst, Natl Key Lab Sci & Technol Vacuum Elect, Beijing 100015, Peoples R China
[2] Beijing Inst Petrochem Technol, Inst Nanophotoelect & High Energy Phys, Beijing 102617, Peoples R China
基金
北京市自然科学基金;
关键词
Extended-interaction klystron (EIK); higher-order modes; output cavity; power enhancement; terahertz amplifier; TM21; mode; EXTENDED-INTERACTION OSCILLATOR; WAVE-GUIDE; BAND; CIRCUIT; DESIGN;
D O I
10.1109/TED.2022.3190807
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Theparameters for a kilowatt-level high-power terahertz amplifier were explored based on the higher-order mode and extended-interaction mechanism. It has been demonstrated that the antisymmetric electrical field mode (TM21) has a unique advantage in achieving high power. Physical factors on power extraction were studied. In particular, the heavily reduced Q(0) has a great effect on the coupling characteristic as well as the output power. It is found that the critical coupling state, i.e., Q(e) = Q(0), defines an upper limit of the power that can be extracted from the output circuit. The design of a complete interaction circuit was accomplished. The particle-in-cell (PIC) simulations showed that a saturated power of 1.2 kW can be achieved at 220 GHz with a voltage of 45 kV and a total current of 2 x 0.6 Awhere two beamswere used. The saturated gain is over 30 dB with a 3-dB bandwidth of similar to 400 MHz.
引用
收藏
页码:5223 / 5228
页数:6
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