Failure Analysis of Resistive Switching Devices

被引：19

作者：

Chen, An ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, Strateg Technol Grp, Sunnyvale, CA 94085 USA

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

resistive switching; switching failure; cycling endurance; retention; FILMS;

D O I：

10.1109/IRPS.2010.5488848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cycling failures for resistive switching devices are discussed based on array statistics measured on Cu2O metal-insulator-metal (MIM) devices. Four types of failures can be identified under rigorous testing conditions. The rate of these failures can be reduced by optimizing operation methods, which has significant impact on cycling endurance and yield. Failures related to data loss may have their origin in material stability.

引用

页码：84 / 88

页数：5

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