The Effect of Post-Oxide Annealing on H2O2-Grown Al2O3, AlGaN/GaN Polarization Charges and MOS-HEMT Performances

被引：0

作者：

Liu, Han-Yin ^{[1
]}

Hsu, Wei-Chou ^{[1
,2
]}

Lee, Ching-Sung

Chou, Bo-Yi ^{[1
]}

Ou, Wen-Chia ^{[1
]}

Wang, Yi-Hsuan ^{[1
]}

Chen, Wei-Fan ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

来源：

2014 INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE, ELECTRONICS AND ELECTRICAL ENGINEERING (ISEEE), VOLS 1-3 | 2014年

关键词：

AlGaN/GaN; MOS-HEMT; gate dielectric layer; post oxide annealing; ELECTRON-MOBILITY TRANSISTORS; DEPOSITION;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOSHEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the hysteresis measurement suggests that the fixed charges in Al2O3 and the interface charges (Dit) at Al2O3/AlGaN interface are reduced. This work also finds that the POA affects polarization charge density and improves MOS- HEMT performances.

引用

页码：591 / +

页数：2

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