InP/InGaAs Photodetector on SOI Photonic Circuitry

被引：42

作者：

Binetti, P. R. A. ^{[1
,5
]}

Leijtens, X. J. M. ^{[1
]}

de Vries, T. ^{[1
]}

Oei, Y. S. ^{[1
]}

Di Cioccio, L. ^{[2
]}

Fedeli, J-M. ^{[2
]}

Lagahe, C. ^{[4
]}

Van Campenhout, J. ^{[3
]}

Van Thourhout, D. ^{[3
]}

van Veldhoven, P. J. ^{[1
]}

Notzel, R. ^{[1
]}

Smit, M. K. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] CEA, LETI, F-38054 Grenoble, France

[3] Univ Ghent, IMEC, Dept Informat Technol INTEC, B-9000 Ghent, Belgium

[4] TRACIT Technol, F-38054 Grenoble, France

[5] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS JOURNAL | 2010年 / 2卷 / 03期

关键词：

Optical interconnects; photodetector; OPTICAL INTERCONNECTS; WAVE-GUIDE; BANDWIDTH; PHOTODIODES; GAIN;

D O I：

10.1109/JPHOT.2010.2046151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 mu m(2), which is the smallest reported to date for this kind of device, and the junction capacitance is below 10 fF, which allows for high integration density and low dynamic power consumption. The measured detector responsivity and 3-dB bandwidth are 0.45 A/W and 33 GHz, respectively. The device fabrication is compatible with wafer-scale processing steps, guaranteeing compatibility toward future-generation electronic IC processing.

引用

页码：299 / 305

页数：7

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