Numerical analysis of SiC merged PiN Schottky diodes

被引：2
作者：
Ayalew, T
Kim, SC
Grasser, T
Selberherr, S
机构：
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
[2] Korea Electrotechnol Res Inst, Power Semicond Res Grp, Chang Won 641120, Gyungnam, South Korea
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
simulation; SiC; power rectifier; MPS diode; switching speed; leakage current;
D O I：
10.4028/www.scientific.net/MSF.483-485.949
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present numerical simulation results of 1500-V SiC merged PiN Schottky (MPS) diode which exhibited Schottky-like on-state and switching characteristics, and PiN-like off-state characteristics. The key parameters that alter the overall device performance have been optimized using the device simulator MINIMOS-NT. The Schottky spacing between the adjacent p+ implanted regions has been varied so that a trade-off between the forward current capability and lower reverse leakage current can be investigated. MPS diodes have shown reliable avalanche operations with blocking voltage of 1350 V which is 90% of the desired value, and a high current density magnitude of 900 A/cm2 for an on-state voltage drop of only 3 V.
引用
收藏
页码：949 / 952
页数：4
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