Effect of pre-existing disorder on surface amorphization in GaN

被引：15

作者：

Azarov, A. Yu. ^{[1
]}

Titov, A. I. ^{[2
]}

Kucheyev, S. O. ^{[3
]}

机构：

[1] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

[2] State Polytech Univ, Dept Phys Elect, St Petersburg 195251, Russia

[3] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 03期

关键词：

IMPLANTED GAN;

D O I：

10.1063/1.3462380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystal GaN epilayers with pre-existing surface disordered layers are bombarded at room temperature with 40 and 100 keV P ions. Stable lattice defects are studied by Rutherford backscattering/channeling spectrometry. Results show that the rate of planar surface amorphization is independent of the concentration of pre-existing defects near the amorphous/crystalline (a/c) interface. In contrast, the formation of stable defects in the crystal bulk in the vicinity of an a/c interface is influenced by the presence of the interface. These experimental observations suggest that the a/c interface, as compared to stable bulk damage, is a more efficient sink for mobile point defects with respect to both processes of point defect recombination and trapping. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462380]

引用

页数：5