Charge Transport and Rectification in Arrays of SAM-Based Tunneling Junctions

被引:214
作者
Nijhuis, Christian A. [1 ]
Reus, William F. [1 ]
Barber, Jabulani R. [1 ]
Dickey, Michael D. [1 ]
Whitesides, George M. [1 ]
机构
[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
关键词
Nanoelectronics; molecular electronics; charge transport; self-assembled monolayers; rectification; charge transfer; SELF-ASSEMBLED MONOLAYERS; GALLIUM-INDIUM EGAIN; ELECTRON-TRANSPORT; LIQUID-METAL; MOLECULE; BOND; CONDUCTION; ALLOY; ALKYL;
D O I
10.1021/nl101918m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70-90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC(11)Fc): these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90-180. These values are larger than expected (theory predicts R 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Pc groups (SCn-1CH3, with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110-293 K, with statistically large numbers of data (N = 300-800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias).
引用
收藏
页码:3611 / 3619
页数:9
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