Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs

被引：2

作者：

Lu, Po-Sheng ^{[1
]}

Lin, Chia-Chen

Su, Pin

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2019年

关键词：

D O I：

10.1109/vlsi-tsa.2019.8804631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL.

引用

页数：2

共 4 条

[1] Impact of Contact Resistance on 2D Negative-Capacitance FETs
Lu, Po-Sheng
You, Wei-Xiang
Su, Pin
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 187 - 189
[2] Evaluation of 2D Negative-Capacitance FETs for Low-Voltage SRAM Applications
Tseng, Kuei-Yang
You, Wei-Xiang
Su, Pin
2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2019,
[3] HfO2-ZrO2 Superlattice Ferroelectric Films as Gates for 2D MoS2-Based Negative-Capacitance Transistors with Enhanced Subthreshold and Endurance Characteristics
Zou, Jiyue
Zou, Xiao
Xu, Jingping
Wang, Hongjiu
Liu, Lu
ACS APPLIED NANO MATERIALS, 2024, 7 (23) : 26996 - 27004
[4] Impact of Interface Trap Charges on the Electrical Characteristics of Back-Gated 2D Negative Capacitance (NC) FET
Jiang, Chunsheng
Zhong, Le
Xie, Lei
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 1204 - 1207

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