Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

被引：0
作者：
El Moutaouakil, Amine [1 ]
Komori, Tsuneyoshi [1 ]
Horiike, Kouhei [1 ]
Suemitsu, Tetsuya [1 ]
Otsuji, Taiichi [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 08期
关键词：
terahertz; plasmon resonance; emitter; dual grating gate dimension; TRANSISTOR; MECHANISM;
D O I：
10.1587/transele.E93.C.1286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
引用
收藏
页码：1286 / 1289
页数：4
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