Cu2SnS3 based solar cell with 3% efficiency

被引：69

作者：

Chierchia, R. ^{[1
]}

Pigna, F. ^{[2
]}

Valentini, M. ^{[3
]}

Malerba, C. ^{[4
]}

Salza, E. ^{[1
]}

Mangiapane, P. ^{[1
]}

Polichetti, T. ^{[5
]}

Mittiga, A. ^{[1
]}

机构：

[1] ENEA, UTRINN FVC, Cr Casaccia, Italy

[2] Univ Roma La Sapienza, Dip Ingn Civile & Ind, Piazzale Aldo Moro 5, I-00185 Rome, Italy

[3] Univ Roma La Sapienza, Dip Fis, Piazzale Aldo Moro 5, I-00185 Rome, Italy

[4] Univ Trento, Dip Ingn Civile Ambientale & Meccan, Trento, Italy

[5] ENEA, UTTPOR MDB, Cr Portici, Italy

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13, NO 1 | 2016年 / 13卷 / 01期

关键词：

Cu2SnS3; sulphurization; thin film; calchogenide; photovoltaic cells; THIN-FILM;

D O I：

10.1002/pssc.201510115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2SnS3 is an earth abundant material suitable for photovoltaic applications. Unfortunately, the material still suffers of a low diffusion length of the carriers due to the presence of spurious phases, voids, defects and small grain size. In order to improve the quality of our samples, the influence of the deposition parameters on its structural properties has been studied. The solar cell obtained with the optimized Cu2SnS3 has shown an external quantum yield larger than 80% around 500 nm a conversion efficiency in the order of 3%, a J(sc) of 26 mA and a V-oc of 240 mV, one of the world best result obtained with a Cu2SnS3 based solar cell. Furthermore the external quantum yield at wavelength larger than 1200 nm is still around 30% making this material interesting for IR detectors also. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：35 / 39

页数：5

共 8 条

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