Interchannel coupling induced gapless modes in multichannel zero-line systems

被引:10
作者
Han, Yulei [1 ,2 ,3 ]
You, Sanyi [2 ,3 ]
Qiao, Zhenhua [2 ,3 ]
机构
[1] Fuzhou Univ, Dept Phys, Fuzhou 350108, Fujian, Peoples R China
[2] Univ Sci & Technol China, ICQD, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
GRAPHENE; TRANSPORT; SPIN;
D O I
10.1103/PhysRevB.105.155301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In bilayer graphene, the application of a perpendicular electric field breaks the inversion symmetry to open a bulk band gap to harbor the quantum valley Hall effect. When the field varies spatially, a topologically confined mode (also named the zero-line mode) arises along the zero-field line. In this work, we theoretically investigate the electronic transport properties of the multichannel zero-line systems. The finite-size effect in topological systems (e.g., quantum Hall effect, topological insulators) often induces a topologically trivial gap to realize a normal insulator. To our surprise, we find that the coupling between neighboring zero lines can give rise to striking electronic properties depending on the number of channels m, i.e., a trivial band gap for even m, whereas a nontrivial gapless mode for odd m. We further show that these findings apply to various ribbon orientations. A general effective model is constructed to provide a clear physical picture of the emergence of gapless modes. In the end, a gate-tunable device is proposed to function as a switch with controllable current partitions. We believe that our findings are experimentally accessible, and have potential practical applications in designing multifunctional valley-based electronics.
引用
收藏
页数:8
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