Ion-Movement-Based Synaptic Device for Brain-Inspired Computing

被引:5
作者
Yoon, Chansoo [1 ]
Oh, Gwangtaek [1 ]
Park, Bae Ho [1 ]
机构
[1] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 05029, South Korea
关键词
ion movement; synaptic device; brain-inspired computing; OXIDE MEMRISTORS; MEMORY; SYNAPSES; INTERNET; THINGS; SYNCHRONIZATION; IMPLEMENTATION; TRANSISTORS; CONTROLLER; ELEMENTS;
D O I
10.3390/nano12101728
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As the amount of data has grown exponentially with the advent of artificial intelligence and the Internet of Things, computing systems with high energy efficiency, high scalability, and high processing speed are urgently required. Unlike traditional digital computing, which suffers from the von Neumann bottleneck, brain-inspired computing can provide efficient, parallel, and low-power computation based on analog changes in synaptic connections between neurons. Synapse nodes in brain-inspired computing have been typically implemented with dozens of silicon transistors, which is an energy-intensive and non-scalable approach. Ion-movement-based synaptic devices for brain-inspired computing have attracted increasing attention for mimicking the performance of the biological synapse in the human brain due to their low area and low energy costs. This paper discusses the recent development of ion-movement-based synaptic devices for hardware implementation of brain-inspired computing and their principles of operation. From the perspective of the device-level requirements for brain-inspired computing, we address the advantages, challenges, and future prospects associated with different types of ion-movement-based synaptic devices.
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页数:29
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