High Photoluminescent Property of Low-Melting Sn-Doped Phosphate Glass

被引：86

作者：

Masai, Hirokazu ^{[1
,3
]}

Takahashi, Yoshihiro ^{[1
]}

Fujiwara, Takumi ^{[1
]}

Matsumoto, Syuji ^{[2
]}

Yoko, Toshinobu ^{[3
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Sch Engn, Sendai, Miyagi 9808579, Japan

[2] Asahi Glass Co Ltd, Res Ctr, Yokohama, Kanagawa 2118755, Japan

[3] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 08期

关键词：

QUANTUM EFFICIENCIES; LUMINESCENCE; SIO2; SILICATE;

D O I：

10.1143/APEX.3.082102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the quantum efficiency (QE) of UV-excited photoluminescence measured in SnO-ZnO-P(2)O(5) glass developed as rare earth (RE)-free material for light emitting diode (LED) applications, we report what is, to the best of our knowledge, the highest value of QE ever reported It is notable that the QE value of the present RE-free glass (similar to 90%) is comparable to that of RE-doped glass For future LED applications, we have emphasized that the low-melting glass will be one of the most industrially favorable inorganic materials to replace organic sealants that suffer degradation by strong LED irradiation (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 25 条

[1]

Aitken B. G., 1993, US Patent, Patent No. [5,246,890, 5246890]

[2]

Akai T., 2005, [No title captured], Patent No. [WO2007017928-A1, 2007017928]

[3] The effect of alumina on the Sn2+/Sn4+ redox equilibrium and the incorporation of tin in Na2O/Al2O3/SiO2melts [J].