n- and p-Channel field-effect transistors based on diquinoxalinoTTF derivatives

被引：3
作者：
Borjigin, Naraso [1 ,2 ]
Nishida, Jun-ichi [2 ]
Tokito, Shizuo [3 ]
Theogarajan, Luke [1 ]
Yamashita, Yoshiro [2 ]
机构：
[1] Univ Calif Santa Barbara, Calif NanoSyst Inst CNSI, Santa Barbara, CA 93106 USA
[2] Tokyo Inst Technol, Dept Elect Chem, Inerdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 226850, Japan
[3] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 157851, Japan
来源：
SYNTHETIC METALS | 2010年 / 160卷 / 21-22期
关键词：
TTF; Tetrathiafulvalene; Electron withdrawing; Electron donating; HOMO; LUMO; n-type FET; p-type FET; Field-effect transistor; THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; HIGH-PERFORMANCE; SEMICONDUCTORS; OLIGOMERS;
D O I：
10.1016/j.synthmet.2010.09.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Three new quinoxalinoTTF derivatives with methyl, trifluoromethyl and fluor groups were synthesized and characterized by UV-vis absorption spectroscopy, differential scanning calorimetry, X-ray single crystal analysis, X-ray diffraction, and field-effect transistor (FET) characteristics. All of them have pi-stacking structures in the single crystals. The quinoxalinoTTF derivative with trifluoromethyl groups exhibited an n-type FET, which is a rare example of n-channel FETs based on TTF derivatives. The highest electron mobility is 0.01 cm(2) V-1 s. The FET polarity was converted to p-channel from n-channel by replacing the trifluoromethyl groups with methyl groups. The hole mobility is as high as 0.2 cm(2) V-1 S. In contrast, the fluoro substituted derivative did not show FET properties due to the poorly ordered molecular arrangement. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2323 / 2328
页数：6
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