Detuned side-mode injection for enhancing oscillation frequency of a semiconductor laser

被引：0

作者：

Jones, RJ ^{[1
]}

Spencer, PS ^{[1
]}

Shore, KA ^{[1
]}

机构：

[1] Univ Wales, Sch Elect Engn & Comp Syst, Bangor LL57 IUT, Gwynedd, Wales

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2001年 / 148卷 / 01期

关键词：

D O I：

10.1049/ip-opt:20010092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical analysis has been undertaken of the injection locking characteristics of multimode semiconductor lasers. Specific attention has been given to the enhancement in the laser diode relaxation oscillation frequency that can be achieved by optical injection. Detuned injection into the laser side modes is shown to offer the maximum increase in the relaxation oscillation frequency.

引用

页码：35 / 39

页数：5

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