Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

被引：4
|
作者：
Harvard, Ekaterina [1 ]
Brown, Richard [1 ]
Shealy, James R. [1 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期
关键词：
GaN; microwave power FETs; MODFETs; passivation; POWER-AMPLIFIER; HEMTS; HFETS;
D O I：
10.1109/TED.2010.2084370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.
引用
收藏
页码：87 / 94
页数：8
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