Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

被引：4

作者：

Harvard, Ekaterina ^{[1
]}

Brown, Richard ^{[1
]}

Shealy, James R. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

关键词：

GaN; microwave power FETs; MODFETs; passivation; POWER-AMPLIFIER; HEMTS; HFETS;

D O I：

10.1109/TED.2010.2084370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.

引用

页码：87 / 94

页数：8

共 50 条

[1] p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
Coffie, R
Buttari, D
Heikman, S
Keller, S
Chini, A
Shen, L
Mishra, UK
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 588 - 590
[2] Temperature Estimation of High-Electron Mobility Transistors AlGaN/GaN
Latry, Olivier
Joubert, Eric
Neveu, Tristan
Moultif, Niemat
Ndiaye, Mohamed
2018 19TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (IEEE MELECON'18), 2018, : 265 - 268
[3] Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
Murugapandiyan, P.
Nirmal, D.
Hasan, Md Tanvir
Varghese, Arathy
Ajayan, J.
Fletcher, A. S. Augustine
Ramkumar, N.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 273
[4] Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
Fitch, R. C.
Walker, D. E., Jr.
Chabak, K. D.
Gillespie, J. K.
Kossler, M.
Trejo, M.
Crespo, A.
Liu, L.
Kang, T. S.
Lo, C. -F.
Ren, F.
Cheney, D. J.
Pearton, S. J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06):
[5] Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
Marino, Fabio Alessio
Faralli, Nicolas
Palacios, Tomas
Ferry, David K.
Goodnick, Stephen M.
Saraniti, Marco
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 353 - 360
[6] Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation
Lin, Yu-Shyan
Lin, Shin-Fu
Hsu, Wei-Chou
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (01)
[7] Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
Han, Tie-Cheng
Zhao, Hong-Dong
Peng, Xiao-Can
CHINESE PHYSICS B, 2019, 28 (04)
[8] Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors
Chan, Chih-Yuan
Lee, Ting-Chi
Hsu, Shawn S. H.
Chen, Leaf
Lin, Yu-Syuan
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 478 - 484
[9] AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers
Lin, Yu-Shyan
Lu, Chi-Che
MICROMACHINES, 2023, 14 (06)
[10] Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment
Chou, Sheng-Yao
Wu, Pei-Yu
Chen, Ming-Chen
Chang, Ting-Chang
Tsai, Xin-Ying
Lin, Shih-Kai
Kuo, Ting-Tzu
Huang, Wei-Chen
Tu, Hong-Yi
Wu, Chung-Wei
Tsai, Tsung-Ming
Huang, Jen-Wei
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 213 - 216

← 1 2 3 4 5 →