Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates

被引：6

作者：

Okamoto, T ^{[1
]}

Saito, T ^{[1
]}

Murakami, S ^{[1
]}

Nishino, H ^{[1
]}

Maruyama, K ^{[1
]}

Nishijima, Y ^{[1
]}

Wada, H ^{[1
]}

Nagashima, M ^{[1
]}

Nogami, Y ^{[1
]}

机构：

[1] JAPAN DEF AGCY,SETAGAYA KU,TOKYO 154,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.117803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found the effects of HgTe layers on dislocations of (111)B HgCdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. The dislocations in HgCdTe layers were reduced by inserting thin HgTe layers between HgCdTe and CdTe buffer layers. Using this method, the dislocation density of 2.3x10(6) cm(-2) was obtained, which is less than quarter that of HgCdTe layers without HgTe. (C) 1996 American Institute of Physics.

引用

页码：677 / 678

页数：2

共 7 条

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