Barrier height tuning in Ti/4H-SiC Schottky diodes

被引：21

作者：

Bellocchi, G. ^{[1
]}

Vivona, M. ^{[2
]}

Bongiorno, C. ^{[2
]}

Badala, P. ^{[1
]}

Bassi, A. ^{[1
]}

Rascuna, S. ^{[1
]}

Roccaforte, F. ^{[2
]}

机构：

[1] STMicroelectronics, Str Primosole 50, I-95121 Catania, Italy

[2] CNR IMM, Str 8,5, Catania, Italy

来源：

SOLID-STATE ELECTRONICS | 2021年 / 186卷

关键词：

SiC diode; Schottky barrier; Diffusion; Power device; TRANSPORT; CONTACTS;

D O I：

10.1016/j.sse.2021.108042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.

引用

页数：5

共 16 条

[1] Demonstration of high voltage (600-1300 V), high current (10-140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes [J].

Alexandrov, P ;

Wright, W ;

Pan, M ;

Weiner, M ;

Jiao, L ;

Zhao, JH .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :263-269

[2]

Baliga J., 1987, Modern power devices

[3] Transport localization in heterogeneous Schottky barriers of quantum-defined metal films [J].

Giannazzo, F ;

Roccaforte, F ;

Raineri, V ;

Liotta, SF .

EUROPHYSICS LETTERS, 2006, 74 (04) :686-692

[4] Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide [J].

Gora, V. E. ;

Chawanda, A. ;

Nyamhere, C. ;

Auret, F. D. ;

Mazunga, F. ;

Jaure, T. ;

Chibaya, B. ;

Omotoso, E. ;

Danga, H. T. ;

Tunhuma, S. M. .

PHYSICA B-CONDENSED MATTER, 2018, 535 :333-337

[5] Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity [J].

Im, HJ ;

Ding, Y ;

Pelz, JP ;

Choyke, WJ .

PHYSICAL REVIEW B, 2001, 64 (07)

[6]

Kimoto T, 2014, FUNDAMENTALS OF SILICON CARBIDE TECHNOLOGY: GROWTH, CHARACTERIZATION, DEVICES, AND APPLICATIONS, P1

[7] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[8] 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts [J].

Perrone, D. ;

Naretto, M. ;

Ferrero, S. ;

Scaltrito, L. ;

Pirri, C. F. .

SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :647-650

[9]

Ren F., 2003, Wide Band Gap Electronic Devices

[10]

Rhoderick EH, 2006, METAL SEMICONDUCTOR, V2

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