An 890 mW Stacked Power Amplifier using SiGe HBTs for X-band Multifunctional Chips

被引：0

作者：

Liu, Chao ^{[1
,2
]}

Li, Qiang ^{[1
]}

Li, Yihu ^{[2
]}

Li, Xiang ^{[2
]}

Liu, Haitao ^{[2
]}

Xiong, Yong-Zhong ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China

[2] CAEP, Terahertz Res Ctr, Semicond Device Res Lab, Chengdu, Peoples R China

来源：

ESSCIRC CONFERENCE 2015 - 41ST EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC) | 2015年

关键词：

HBT; SiGe BiCMOS; stacked power amplifier (PA); X-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a stacked power amplifier (PA) for X-band multifunctional chips using 0.13-mu m SiGe HBTs. To achieve high output power, two 5-stacked PAs with optimum inter-stage matching networks are combined with Wilkinson power combiners. Furthermore, a 3-stacked amplifier is used as the driving amplifier to increase the gain of the whole PA. During on-chip measurements, the X-band stacked PA achieves peak output power of 890 mW and maximum power added efficiency (PAE) of 17.8 %. The chip area is 1.9 x 1.4 mm(2) including the testing pads. To the authors' knowledge, our proposed PA achieves the highest output power at X-band with a silicon-based technology.

引用

页码：68 / 71

页数：4

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