Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions

被引：4
作者：
Chowdhury, Supria [1 ]
Ichimura, Masaya [1 ]
机构：
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期
关键词：
PRECURSORS; GROWTH; MOCVD;
D O I：
10.1143/JJAP.49.062302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photochemical deposition (PCD) is a technique of film preparation from solutions by UV light illumination. In this study, GaSxOy thin films were prepared on fluorine-doped-tin-oxide-coated glass substrates by PCD from an aqueous solution of Ga-2(SO4)(3) and Na2S2O3. GaSxOy is a wide-band-gap semiconductor and suitable as a buffer layer material in solar cells. The as-deposited films were characterized by Auger electron spectroscopy, scanning electron microscopy and optical transmission spectroscopy. The O/Ga ratio was close to the stoichiometric ratio, 1.5, and the S/Ga ratio is much smaller, less than 0.3 for a film deposited under the optimum conditions. The film exhibited a wide energy band gap of 3.5 eV and a resistivity of the order of 10(2) Omega cm. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.062302
引用
收藏
页码：0623021 / 0623024
页数：4
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